Laboratoire de Recherche en Nanosciences

Domaines scientifiques déclarés au RNSR

Panels ERC déclarés au RNSR

Mots-clés des publications HAL repérées

Projets ANR

• Imagerie biomédicale multiparamétrique « label-free » basée sur les ondes de surface à cristaux photoniques. · 2020

Publications HAL récentes repérées

• Influence of electrical properties on thermal boundary conductance at metal/semiconductor interface · 2026

  Résumé de la publication : Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat transfer across metal/doped semiconductor junctions is investigated. Specifically, thermal boundary…

• Influence of electric properties on thermal boundary conductance at metal/semiconductor interface · 2026

  Résumé de la publication : Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat transfer across metal/doped semiconductor junctions is investigated. Specifically, thermal boundary…

• Integration of bright color centers into arrays of silicon carbide nanopillars · 2025

  Résumé de la publication : Silicon carbide (SiC) is a wide-bandgap semiconductor combining mature fabrication processes with the ability to host optically active point defects, called color centers, making it ideal for quantum technologies. This study focuses on silicon vacancy defects in 4H-SiC, integrated into nanopillar arrays…

• Integration of bright color centers into arrays of silicon carbide nanopillars · 2025

  Résumé de la publication : Silicon carbide (SiC) is a wide-bandgap semiconductor combining mature fabrication processes with the ability to host optically active point defects, called color centers, making it ideal for quantum technologies. This study focuses on silicon vacancy defects in 4H-SiC, integrated into nanopillar arrays…

• Studies of Raman-Scattered Technology on S-Shaped Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene-10 (S-DNTT-10) · 2025

  Résumé de la publication : S-shaped dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene (S-DNTT) molecules have shown promise for applications in organic electronic devices, though their molecular characteristics are not fully understood yet. In this study, we first revealed the material characteristics of S-DNTT-10 by vibrational dynamics using Raman spectroscopy and density functional…