Institut d'Electronique et des Systèmes

Domaines scientifiques déclarés au RNSR

Panels ERC déclarés au RNSR

Mots-clés des publications HAL repérées

Projets ANR

• Cristaux plasmoniques spatio-temporels · 2026
• LabCom — Laboratoire commun sur les lasers à CAScade antImoniure pour le Moyen Infra-Rouge · 2025
• Transducteur acoustique pour la spectroscopie laser photoacoustique · 2025

Publications HAL récentes repérées

• Exploring surface effects in GaN based nano-diodes: a physical interpretation through Monte Carlo simulations · 2026

  Résumé de la publication : Surface-trap effects are shown to be of main importance to understand the working principle of a two-terminal device based on AlGaN/GaN nanochannels. A deep knowledge of the physical mechanism governing the behavior of the current flow may allow developing physical models for…

• HARV-SoC Evaluation on SmartFusion2 and PolarFire FPGAs Under Neutron and Proton Radiation · 2026

  Résumé de la publication : Radiation-induced faults pose significant challenges for safety-critical systems in space, avionics, and defense. Single-Event Upsets (SEUs) are a key concern, causing bit flips in memory elements and impacting data integrity and system reliability. The Hardened RISC-V System-on-Chip (HARV-SoC) is a soft-core processor…

• Kinetic Monte Carlo Simulations of Antiphase Domains Burial during MBE Growth of GaAs on (001) Si · 2026

  Résumé de la publication : We present a model for kinetic Monte Carlo simulations of antiphase domain burial during GaAs growth on (001) Si by molecular beam epitaxy. The model shows that both anisotropic nearest-neighbor binding and anisotropic diffusion of Ga atoms play key roles in the…

• Growth and study of Sb-based Interband Cascade Laser on GaSb, GaAs and Si substrates · 2026

  Résumé de la publication : Type-II quantum well (QW) interband cascade lasers (ICLs) have emerged as the most efficient laser sources in the mid-infrared (MIR) spectral range, especially between 3 and 6 µm. However, their widespread adoption in commercial applications, such as trace gas detection and industrial…

• In-situ observations of misfit dislocation motion in AlSb/GaSb dislocation filter layer structures · 2026

  Résumé de la publication : The dislocation dynamics in epitaxially strained GaSb/AlSb/GaSb heterostructures grown on a Si(001) substrate via molecular beam epitaxy have been studied by means of scanning transmission electron microscopy. The 100 nm-thick AlSb layerintentionally inserted as dislocation filteris partially relaxed by bending pre-existing threading…